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Product Detailed Parameters
- Description：IGBT 600V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：125 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：350µJ (on), 435µJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：29ns/120ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW30NC60KD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the advanced PowerMESH process to achieve an optimal balance between switching performance and low on-state voltage drop. The device features a collector-emitter maximum voltage (VCEO) of 600 V and a continuous collector current (Ic) of 60 A at 25°C. It includes an integrated ultra-fast free-wheeling diode with a saturation voltage (VCE(sat)) of 2.1 V. The component supports a short-circuit withstand time of 10 μs and operates within a junction temperature range of -55°C to +150°C, housed in a TO-247-3 through-hole package.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Integrated ultra-fast free-wheeling diode for efficient commutation
- Low C_res/C_ies ratio eliminates susceptibility to cross-conduction
- Short-circuit ruggedness with 10 μs withstand capability
Applications
- Resonant or soft-switching applications
- High-frequency power conversion circuits
- Industrial motor drives requiring fast recovery characteristics
Procurement Notes
Verify the specific ordering suffix 'KD' against the manufacturer's official datasheet to confirm the presence of the integrated ultra-fast diode and short-circuit ruggedness specifications. Ensure the procurement documentation matches the TO-247-3 package type and RoHS compliance status required for the design.
Selection Notes
Select this component when a 600 V rating and 60 A continuous current are required alongside high-frequency operation up to 50 kHz. The integrated ultra-fast diode makes it suitable for topologies requiring fast reverse recovery. Verify thermal management capabilities for the 200 W power dissipation limit in the target application environment.
Part Context
This IGBT belongs to the STGW series, which employs PowerMESH technology for improved efficiency. It is part of a family including variants like STGW30NC60WD and STGP8NC60KD. The 'K' designation typically indicates enhanced short-circuit ruggedness and specific diode characteristics compared to standard versions.
Replacement Considerations
Potential substitutes include STGW30NC60WD and STGP8NC60KD. Verify that alternative parts match the 600 V/60 A ratings and TO-247-3 package. Confirm compatibility of the integrated diode's reverse recovery characteristics with the existing circuit design.
