STGW33IH120D

$1.39

Description：IGBT 1200V 60A TO247
Series：PowerMESH™

SKU:dfdb39e5d562 Category: Single IGBTs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 1200V 60A TO247
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
Power - Max：220 W
Switching Energy：1.5mJ (on), 3.4mJ (off)
Input Type：Standard
Gate Charge：127 nC
Td (on/off) @ 25°C：46ns/284ns
Test Condition：960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：85 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 Long Leads
Grade：-
Qualification：-

Download product information

STGW33IH120D

Overview

The STGW33IH120D is a 1200 V, 60 A very fast IGBT utilizing the PowerMESH™ process. It features low saturation voltage and switching loss with a soft ultra-fast recovery antiparallel diode. Key electrical parameters include a collector-emitter breakdown voltage of 1200 V, continuous collector current of 60 A at 25 °C, and total dissipation of 220 W at TC = 25 °C. The device operates within a junction temperature range of –55 to 150 °C. Switching characteristics measured at VCC = 960 V, IC = 20 A, RG = 10 Ω show turn-on energy of 1.5 mJ and turn-off energy of 3.4 mJ. Gate charge is 127 nC.

Feature Summary

Advanced PowerMESH™ process for optimized trade-off between switching performance and low on-state behavior
Very soft ultra-fast recovery antiparallel diode integrated with the IGBT
Designed specifically for resonant or soft switching applications

Applications

Induction cooking appliances
Microwave ovens
Soft switching power converters

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors. Confirm package marking matches GW33IH120D. Check datasheet revision history for updates. Ensure storage conditions comply with moisture sensitivity levels. Validate supplier documentation against official specifications before integration.

Selection Notes

Select this component for high-frequency resonant topologies requiring low conduction losses. Evaluate thermal resistance values for heat sink design. Consider gate resistance impact on switching speed and EMI. Verify short-circuit withstand capability if required by circuit topology. Match diode recovery characteristics with load requirements.

Part Context

This device belongs to the STPOWER family of IGBTs designed for high-efficiency power conversion. It represents an evolution in trench gate field-stop technology aimed at reducing tail current and improving switching efficiency compared to older planar technologies.