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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：840µJ (on), 7.4mJ (off)
- Input Type：Standard
- Gate Charge：83 nC
- Td (on/off) @ 25°C：92ns/1.1µs
- Test Condition：480V, 20A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGW35NB60S is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ family, rated for a collector-emitter voltage of 600 V and a continuous collector current of 35 A. It utilizes a patented strip layout technology to achieve low on-state voltage drop, specifically optimized for low-frequency switching applications up to 1 kHz. The device features high input impedance, low gate charge, and high current capability, making it suitable for efficient power conversion in industrial and consumer electronics.
Feature Summary
- PowerMESH™ technology with patented strip layout for low saturation voltage
- Optimized for low-frequency operation up to 1 kHz
- High input impedance with low gate charge requirements
Applications
- Switch-mode power supplies (SMPS)
- Induction heating systems
- Motor control drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and thermal characteristics. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm active status and availability before finalizing procurement plans.
Selection Notes
Select this IGBT for applications requiring moderate current handling at 600 V with a focus on minimizing conduction losses at lower switching frequencies. Consider the thermal resistance of the TO-247 package for heat dissipation needs. Evaluate the gate drive requirements against the specified gate charge to ensure compatibility with existing driver circuits.
Part Context
This component belongs to STMicroelectronics' PowerMESH™ IGBT series, which leverages advanced silicon technology to reduce on-state voltage drop. The 'NB' designation typically indicates a standard N-channel configuration within the 600 V class, while the 'S' suffix denotes optimization for low saturation voltage in low-frequency applications.
Replacement Considerations
Check for direct replacements such as the STGW30NB60S or STGW40NB60S within the same PowerMESH™ family, ensuring pinout and thermal parameters match. Verify that any substitute maintains the required 600 V rating and sufficient current capacity for the specific application load.
