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Product Detailed Parameters
- Description：IGBT 1300V 63A TO247
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1300 V
- Current - Collector (Ic) (Max)：63 A
- Current - Collector Pulsed (Icm)：125 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：3.4mJ (off)
- Input Type：Standard
- Gate Charge：127 nC
- Td (on/off) @ 25°C：-/284ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGW38IH130D is a very fast IGBT developed using advanced PowerMESH™ technology, designed to provide an excellent trade-off between switching performance and low on-state behavior. It features a co-packaged free-wheeling diode with low static and peak forward voltage drop. The device is rated for a collector-emitter voltage of 1300 V and offers high current capability. Key electrical parameters include a continuous collector current of 63 A at TC = 25 °C (TO-247 long leads) and a saturation voltage of 2.1 V typ. at IC = 20 A. Switching losses are minimized, with turn-off energy measured at 3.4 mJ under standard test conditions.
Feature Summary
- Developed using advanced PowerMESH™ technology for optimized switching and conduction performance
- Co-packaged free-wheeling diode featuring low static and peak forward voltage drop
- Designed specifically for resonant or soft-switching applications
Applications
- Induction cooking systems
- Microwave ovens
- Soft-switching power converters
Procurement Notes
Verify component authenticity through authorized channels as the datasheet indicates this product may be obsolete. Confirm package availability in TO-247 long leads or TO-3P formats. Ensure compliance with environmental specifications such as ECOPACK® grades before procurement. Cross-reference ordering codes against current manufacturer lists to confirm production status.
Selection Notes
Select based on required thermal management capabilities given the junction-to-case resistance values. Consider the gate charge requirements for driver design, noting the total gate charge characteristics. Evaluate the turn-off latching current limits for safe operation under inductive load switching conditions. Match the package type to the specific mechanical constraints of the target application.
Part Context
This component belongs to STMicroelectronics' family of very fast IGBTs utilizing PowerMESH™ technology. It is engineered to maximize efficiency in high-frequency applications by balancing low saturation voltage with reduced switching losses. The integrated diode enhances system reliability by providing a dedicated path for reverse current flow.
Replacement Considerations
Check for direct substitutes within the STGW series or other STMicroelectronics IGBT families that match the 1300 V rating and similar current capabilities. Verify pinout compatibility and thermal resistance specifications when considering alternative packages like TO-247 or TO-3P.
