STGW40H65DFB-4

$4.74

Description：IGBT TRENCH FS 650V 80A TO-247-4
Series：HB

SKU:4d9d2dc68834 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247-4
Series：HB
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：283 W
Switching Energy：200µJ (on), 410µJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：40ns/142ns
Test Condition：400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：62 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4
Grade：-
Qualification：-

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STGW40H65DFB-4

Overview

The STGW40H65DFB-4 is an N-channel IGBT from the HB series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 40 A. The device operates with a maximum junction temperature of 175 °C and includes a Kelvin emitter pin to separate power and drive paths. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 1.6 V at 40 A and a maximum gate-emitter voltage (VGEO) of ±20 V.

Feature Summary

Trench gate field-stop technology for optimized switching performance
Kelvin emitter pin for enhanced driving signal integrity
Positive VCE(sat) temperature coefficient for safe paralleling
Fast soft recovery antiparallel diode

Applications

High frequency converters
Frequency inverters
Motor drives

Procurement Notes

Verify the specific suffix '-4' against official STMicroelectronics documentation to confirm exact parameter tolerances and package variations. Ensure compatibility with existing thermal management designs due to the 175 °C junction rating. Cross-reference datasheets for precise switching energy values required for circuit simulation.

Selection Notes

Select this component for applications requiring high-speed switching with minimized tail current. The tight parameter distribution supports parallel operation in higher power configurations. Consider the TO-247 package constraints for mounting and thermal dissipation requirements in the target design.

Part Context

This part belongs to the HB series of IGBTs developed by STMicroelectronics. The series focuses on balancing conduction and switching losses to maximize efficiency in frequency converters. It utilizes proprietary trench gate field-stop technology to achieve high performance.

Replacement Considerations

STGWA40H65DFB is a related variant within the same series. Verify pinout compatibility and specific electrical limits before substitution. Consult official replacement guides for confirmed equivalents.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.