STGW40H65DFB

$3.30

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-

SKU:9f7fdc165158 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：283 W
Switching Energy：498µJ (on), 363µJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：40ns/142ns
Test Condition：400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：62 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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STGW40H65DFB

Overview

The STGW40H65DFB is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum continuous collector current of 80 A and a maximum collector-emitter voltage of 650 V. The device is housed in a TO-247 package designed for through-hole mounting. Key electrical parameters include a maximum power dissipation of 283 W, a maximum collector-emitter saturation voltage of 2.3 V, and a maximum gate-emitter voltage of ±20 V. The component operates within a temperature range from -55°C to +175°C.

Feature Summary

Utilizes trench gate field-stop structure technology
Includes integrated fast soft recovery anti-parallel diode
Features Kelvin emitter pin for improved switching performance

Applications

High-efficiency frequency converters
Motor drive systems
Industrial power supplies

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical characteristics and packaging details. Ensure compatibility with thermal management requirements for the specified power dissipation limits. Confirm RoHS compliance status if environmental regulations apply to the target assembly process.

Selection Notes

Select this component for applications requiring high current handling at 650 V blocking levels. Consider the TO-247 package for robust mechanical mounting and heat sinking capabilities. Evaluate the trade-off between conduction losses and switching speeds inherent to the trench gate field-stop architecture.

Part Context

This IGBT belongs to the HB series, representing an optimization between conduction and switching losses. The design aims to maximize efficiency in frequency converter applications. The tight parameter distribution supports safer paralleling operations in higher power configurations.

Replacement Considerations

STGWT40H65FB is a verified alternative offering similar specifications in a TO-3P package. Verify pinout compatibility and thermal resistance differences before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.