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The STGW40NC60KD is a single N-channel IGBT from STMicroelectronics, utilizing the PowerMESH™ technology for optimized switching and conduction performance. It features a 600 V collector-emitter breakdown voltage (V_CES) and a continuous collector current of 50 A at 100°C. The device is housed in a TO-247 package with a maximum power dissipation of 200 W. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.5 V at 25°C and a short-circuit withstand time of 10 μs. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'KD' against the manufacturer's official datasheet to confirm the presence of the integrated ultra-fast diode and short-circuit ruggedness. Ensure the ordering part number matches the exact thermal and electrical specifications required for the target application circuit design.
Select this component for designs requiring high current capability combined with fast switching speeds. The 10 μs short-circuit withstand time provides robust protection in fault conditions. Consider the TO-247 package for through-hole mounting and adequate heat sinking capabilities in medium-power industrial environments.
This model belongs to the STGW series of very fast PowerMESH IGBTs. It shares the core technology with variants like the STGW30NC60KD and STGP8NC60KD but offers a higher current rating of 50 A. The 'K' designation typically indicates enhanced short-circuit ruggedness compared to standard versions.
Direct substitutes within the same family include the STGW30NC60KD for lower current requirements or the STGP40NC60KD if available. Verify pinout compatibility and thermal resistance values when replacing with other TO-247 IGBTs from different manufacturers.