STGW50H60DF

$1.92

Description：IGBT TRENCH FS 600V 100A TO-247
Series：-

SKU:c8ea22abfc33 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 100A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
Power - Max：360 W
Switching Energy：890µJ (on), 860µJ (off)
Input Type：Standard
Gate Charge：217 nC
Td (on/off) @ 25°C：62ns/178ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：55 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW50H60DF

Overview

The STGW50H60DF is a 600 V, 50 A field stop trench gate IGBT with an integrated Ultrafast diode. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 100 A at 25 °C case temperature. The device operates within a junction temperature range of -55 to 150 °C and dissipates up to 360 W at 25 °C. Key electrical parameters include a saturation voltage of 1.8 V (typical) at 50 A and 25 °C, and a short-circuit withstand time of 6 µs. Thermal resistance from junction to case is 0.35 °C/W for the IGBT and 1.5 °C/W for the diode.

Feature Summary

Advanced proprietary trench gate and field stop structure optimizing conduction and switching losses
Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation
Ultrafast soft recovery antiparallel diode co-packaged with the IGBT
Short-circuit rated capability with a 6 µs withstand time

Applications

Photovoltaic inverters
Uninterruptible power supply systems
Welding equipment
Power factor correction circuits
High switching frequency converters

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm datasheet revision status prior to integration. Ensure thermal management design aligns with specified junction-to-case resistance values. Validate that application conditions remain within absolute maximum ratings for voltage, current, and temperature limits.

Selection Notes

Select this component for high-frequency applications requiring optimized efficiency between conduction and switching losses. Consider the tight parameter distribution if parallel operation is required in the circuit design. Evaluate thermal constraints based on the specific junction-to-ambient resistance values provided in the datasheet for your mounting configuration.

Part Context

This device belongs to the STMicroelectronics H series of IGBTs, utilizing a field stop trench gate technology. It is designed as a high-speed switch suitable for demanding power conversion environments. The TO-247 package provides robust mechanical stability and efficient heat dissipation capabilities for industrial power electronics applications.