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The STGW50HF60S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes Trench gate field-stop technology and belongs to the HB2 series, designed for high-speed applications. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 50 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage (VCEsat) of 1.55 V and a maximum power dissipation (Pd) of 272 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.
Verify the specific suffix against official datasheets to confirm exact electrical characteristics and packaging options. Ensure compatibility with thermal management requirements given the 272 W power dissipation rating. Confirm RoHS compliance status via manufacturer documentation before integration into regulated products.
Select this component for designs requiring a balance between low conduction losses and fast switching speeds. The TO-247-3 package suits high-power through-hole implementations. Consider the 600 V rating for medium-voltage AC/DC conversion stages where robust short-circuit withstand capability is necessary.
This IGBT is part of STMicroelectronics' HB2 series, which employs advanced trench gate and field-stop structures. This family targets applications demanding high efficiency and reliability, offering tight parameter distribution to facilitate parallel operation in high-current inverter topologies.
Direct substitutes may include other STMicroelectronics HB2 series devices with matching voltage and current ratings, such as the STGWA50HP65FB2, provided pinout and thermal resistance specifications align with the existing board layout.