STGW75M65DF2

$6.27

Description：IGBT TRENCH FS 650V 120A TO-247
Series：M

SKU:5797feab7425 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 120A TO-247
Series：M
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：120 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：468 W
Switching Energy：690µJ (on), 2.54mJ (off)
Input Type：Standard
Gate Charge：225 nC
Td (on/off) @ 25°C：47ns/125ns
Test Condition：400V, 75A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：165 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW75M65DF2

Overview

The STGW75M65DF2 is a single N-channel IGBT from the M series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 120 A at 25°C. The typical saturation voltage (VCE(sat)) is 1.65 V at 75 A. Power dissipation reaches 488 W in a TO-247-3 package. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Advanced trench gate field-stop technology for low loss and short-circuit functionality
Positive VCE(sat) temperature coefficient enabling safer paralleling operation
Soft and very fast-recovery antiparallel diode integrated with the device

Applications

Inverter systems requiring optimal balance between performance and efficiency
Industrial motor drives
High-frequency power supplies

Procurement Notes

Verify the exact part number against official datasheets, as the provided model may contain a typo compared to the standard STGWA75M65DF2 designation. Confirm RoHS compliance status and specific ordering suffixes directly with the manufacturer or authorized distributors to ensure correct component specifications and availability.

Selection Notes

Select this component for applications demanding high current handling and robust short-circuit withstand capability up to 6 microseconds. The tight parameter distribution facilitates parallel operation. Ensure thermal management solutions support the specified power dissipation and junction temperature limits within the operating environment.

Part Context

This device belongs to the STMicroelectronics M series IGBTs, designed for inverter systems where low-loss and short-circuit functionality are essential. The series emphasizes an optimal balance between system performance and efficiency, leveraging proprietary trench gate field-stop structures for improved reliability and thermal performance.

Replacement Considerations

Direct substitutes include STGWA75M65DF2. Verify pinout compatibility and electrical parameters such as VCE(sat) and short-circuit time before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.