STGW80H65DFB

Overview

The STGW80H65DFB is an N-channel trench gate field-stop IGBT from the HB series, designed for high-speed switching applications. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 120 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a typical collector-emitter saturation voltage (VCE(sat)) of 1.6 V at IC = 80 A and a maximum power dissipation (Pd) of 469 W. It utilizes a TO-247 package with through-hole mounting and includes a Kelvin emitter pin for improved driving performance.

Feature Summary

• Advanced proprietary trench gate field-stop structure optimizes the balance between conduction and switching losses.
• Kelvin emitter pin separates the power path from the driving signal to enable faster switching events.
• Slightly positive VCE(sat) temperature coefficient ensures safer operation during paralleling.
• Very fast soft recovery antiparallel diode minimizes tail current and enhances overall efficiency.

Applications

• High-frequency frequency converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific suffix against official datasheets, as variations like STGW80H65DFB-4 or STGWA80H65DFBAG may indicate different automotive qualifications or packaging types. Confirm lead times and stock availability directly with authorized distributors, as supply status fluctuates. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when designing circuits requiring high-speed switching with minimized tail current. The tight parameter distribution supports reliable parallel operation for higher current capacity. Consider the thermal resistance and package type for heat sink design. Verify that the gate drive circuitry can accommodate the ±20 V maximum gate-emitter voltage rating for robust performance.

Part Context

This IGBT belongs to STMicroelectronics' HB series, representing an evolution of trench gate field-stop technology. It is engineered to maximize efficiency in frequency converters by balancing conduction and switching losses. The series is characterized by low thermal resistance and excellent switching performance, making it suitable for demanding power electronics applications where reliability and speed are critical.

Replacement Considerations

STGW80H65DFB-4 is a confirmed variant within the same series offering identical electrical characteristics but potentially differing in packaging or qualification standards. Designers should verify pinout compatibility and thermal interface requirements before substituting. Cross-referencing with other HB series devices requires careful evaluation of VCE(sat) and switching energy parameters to ensure circuit performance consistency.