STGW80H65FB

$2.64

Description：IGBT TRENCH FS 650V 120A TO-247
Series：-

SKU:65836a8b92e8 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 120A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：120 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
Power - Max：469 W
Switching Energy：2.1mJ (on), 1.5mJ (off)
Input Type：Standard
Gate Charge：414 nC
Td (on/off) @ 25°C：84ns/280ns
Test Condition：400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW80H65FB

Overview

The STGW80H65FB is an N-channel IGBT from STMicroelectronics, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage rating and an 80 A continuous collector current at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage of 1.6 V at rated current. Packaged in a TO-247-3 through-hole housing, it provides 375 W power dissipation capability.

Feature Summary

Trench gate field-stop structure for optimized switching performance
Kelvin emitter pin for separated driving signal path
Positive Vce(sat) temperature coefficient for safe paralleling

Applications

High-speed frequency converters
Industrial motor drives
Switched-mode power supplies

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure the component meets AEC-Q100 requirements if automotive qualification is necessary, as standard industrial versions may differ. Cross-reference manufacturer part numbers directly to avoid substitution errors.

Selection Notes

Select this component for applications requiring high-speed switching combined with low conduction losses. The positive temperature coefficient facilitates parallel operation without active current sharing circuits. Verify thermal management capabilities align with the 175°C maximum junction temperature limit under expected load conditions.

Part Context

This device belongs to the HB series of IGBTs, designed to balance conduction and switching losses. It represents an evolution in trench gate technology, offering improved efficiency over previous generations. The series targets high-frequency power conversion systems where thermal performance and switching speed are critical design parameters.

Replacement Considerations

STGW80H65DFBAG is a verified automotive-grade alternative within the same family. Both share identical core electrical ratings but differ in qualification standards. Verify package compatibility and thermal resistance values before substituting.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.