STGWA15H120DF2

Overview

The STGWA15H120DF2 is a single IGBT transistor from the H series, utilizing trench gate field-stop technology. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 15 A at 25 °C. The device exhibits a collector-emitter saturation voltage of 2.1 V at 15 A and supports a maximum power dissipation of 259 W. It operates within a temperature range of -55 °C to +175 °C, with a maximum gate-emitter voltage of ±20 V and a short-circuit withstand time of 5 μs at TJ = 150 °C.

Feature Summary

• Advanced trench gate field-stop structure for optimized efficiency in high-switching frequency converters
• Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Minimized tail current characteristics for high-speed switching performance

Applications

• High-switching frequency converters
• Industrial motor drives
• Power supplies requiring efficient hard switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides traceable documentation matching the STMicroelectronics part number. Cross-reference the package type and marking codes to prevent substitution errors during assembly.

Selection Notes

Select this component when designing circuits requiring a balance between conduction and switching losses. The H series offers tight parameter distribution, which is critical for applications involving parallel configurations. Consider the 1200 V rating and 15 A current capability relative to the system's peak load requirements and thermal management constraints.

Part Context

This device belongs to the STGWA15H120F2 family, representing an evolution in trench gate field-stop IGBT technology. It is designed to maximize converter efficiency through minimized tail current and optimized switching behavior. The component serves as a key switching element in medium-power industrial applications where reliability and thermal performance are prioritized.

Replacement Considerations

Direct substitutes include other STMicroelectronics H-series IGBTs with identical 1200 V ratings and TO-247 packages. Verify electrical parameters such as VCE(sat) and switching times before substituting with components from other manufacturers to ensure circuit stability.