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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO247
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：147 W
- Switching Energy：214µJ (off)
- Input Type：Standard
- Gate Charge：56 nC
- Td (on/off) @ 25°C：-/78.8ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA20HP65FB2 is a high-speed IGBT from the HB2 series, utilizing a trench gate field-stop structure in a TO-247 long leads package. It features a collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25 °C case temperature. The device exhibits a typical saturation voltage of 1.65 V at 20 A. It includes a co-packaged protection diode with a forward current of 5 A. Thermal resistance from junction to case is 1.02 °C/W for the IGBT and 5 °C/W for the diode. Maximum operating junction temperature reaches 175 °C.
Feature Summary
- Advanced trench gate field-stop architecture optimized for low conduction losses and reduced switching energy.
- Co-packaged antiparallel diode designed specifically for protection purposes.
- Minimized tail current and tight parameter distribution for reliable parallel operation.
- Positive VCE(sat) temperature coefficient ensuring stable thermal performance.
Applications
- Welding equipment
- Power factor correction circuits
Procurement Notes
Verify component authenticity by checking the marking code G20HP65FB2 against official datasheet specifications. Confirm the package type matches the TO-247 long leads outline dimensions provided in the mechanical data section. Ensure compliance with environmental standards such as ECOPACK grades if required for the specific application environment.
Selection Notes
Select this component when designing fast-switching applications requiring high efficiency. The HB2 series offers improved VCE(sat) behavior at low currents compared to previous generations. Consider the 175 °C maximum junction temperature capability for high-temperature environments. Evaluate the total power dissipation limits based on the specific case temperature conditions of the final assembly.
Part Context
This part belongs to the STMicroelectronics HB2 series of 650 V IGBTs. It shares the proprietary trench gate field-stop technology found across the family but is distinguished by its 20 A rating and TO-247 long leads packaging. It serves as a high-performance alternative for applications demanding minimized switching losses and robust thermal characteristics.
Replacement Considerations
Direct replacements within the same series include STGWA30HP65FB2 and STGWA50HP65FB2, which offer higher current ratings while maintaining similar electrical characteristics and package types. Verify pinout compatibility and thermal resistance values before substitution.
