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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 50A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 25A
- Power - Max：375 W
- Switching Energy：600µJ (on), 700µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：29ns/130ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGWA25H120F2 is a single N-channel IGBT from the M series, utilizing an advanced proprietary trench gate field-stop structure. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 25 A at 25°C. The typical collector-emitter saturation voltage (VCE(sat)) is 1.85 V at Ic = 25 A. It supports a maximum power dissipation (Pd) of 259 W and operates within a junction temperature range of -55°C to +175°C. The device has a gate-emitter leakage current of +/- 250 nA and is housed in a through-hole package.
Feature Summary
- Optimized balance between inverter system performance and efficiency with low-loss characteristics
- Positive VCE(sat) temperature coefficient and tight parameter distribution for safer paralleling operation
- Co-packaged soft- and fast-recovery antiparallel diode
Applications
- Inverter systems requiring optimal balance between performance and efficiency
- Applications where low-loss and short-circuit functionality are essential
Procurement Notes
Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the component meets all required electrical specifications for the target application environment. Ensure compliance with relevant industry standards and RoHS directives as specified in the official documentation.
Selection Notes
Select this component for applications demanding high efficiency and robust short-circuit withstand capability. The M series design provides a favorable trade-off between conduction and switching losses. Consider the positive temperature coefficient for parallel operation requirements and verify thermal management solutions suitable for the 259 W power dissipation rating.
Part Context
This device belongs to the M series of IGBTs developed by STMicroelectronics. The series utilizes a trench gate field-stop structure designed to optimize inverter system performance. It is distinct from other series like H or HB2 by its focus on low-loss applications and integrated antiparallel diode functionality.
Replacement Considerations
Direct replacements should be sought within the STMicroelectronics IGBT portfolio, specifically models sharing the 1200 V rating, 25 A current capacity, and TO-247 package. Verify pin compatibility and electrical parameters such as VCE(sat) and switching times before substitution.
