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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO247
- Series：HB
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：283 W
- Switching Energy：498µJ (on), 363µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：40ns/142ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA40H65FB is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 40 A continuous collector current. It utilizes an advanced proprietary structure to optimize conduction and switching losses. Key electrical parameters include a typical saturation voltage of 1.6 V at 40 A and a maximum junction temperature of 175 °C. The device features minimized tail current and tight parameter distribution for safe paralleling. It is housed in a TO-247 package with long leads for through-hole mounting.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Co-packaged very fast soft recovery antiparallel diode
- Positive VCE(sat) temperature coefficient for safe paralleling
Applications
- High-frequency frequency converters
- Fast switching power supplies
- Motor drive inverters
Procurement Notes
Verify the specific suffix against official documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides genuine STMicroelectronics components with traceable manufacturing data. Cross-reference the part number with the latest datasheet revision to confirm compliance with RoHS standards and automotive qualification status before integration.
Selection Notes
Select this component when balancing conduction loss and switching speed is critical for high-frequency operation. The HB series offers a compromise between these factors compared to other ST IGBT families. Consider the positive temperature coefficient for parallel configurations requiring uniform current sharing without additional ballasting resistors.
Part Context
This model belongs to the HB series of 650 V IGBTs developed by STMicroelectronics. It represents an evolution of the trench gate field-stop technology, designed to maximize efficiency in fast applications. The series is characterized by low saturation voltage and reduced switching energy, targeting industrial and consumer power conversion markets.
Replacement Considerations
Direct replacements within the same family include STGWA30H65FB and STGWA60H65FB, which share identical packaging and pinouts but differ in current ratings. Verify thermal resistance and saturation voltage specifications when substituting to ensure circuit performance remains within design limits.
