STGWA40IH65DF

STGWA40IH65DF

$3.80
  • Description:IGBT TRENCH FS 650V 80A TO247
  • Series:IH

SKU:7f0c1cb6c6cb Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 80A TO247
  • Series:IH
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
  • Power - Max:238 W
  • Switching Energy:190µJ (off)
  • Input Type:Standard
  • Gate Charge:114 nC
  • Td (on/off) @ 25°C:-/210ns
  • Test Condition:400V, 40A, 22Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

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STGWA40IH65DF

Overview

The STGWA40IH65DF is a 650 V, 40 A soft-switching IGBT from the IH series by STMicroelectronics. It utilizes an advanced trench gate field-stop structure optimized for resonant and soft-commutation applications. The device features a low saturation voltage of 1.5 V (typ.) at 40 A and includes a co-packaged freewheeling diode with low forward drop. Rated for a maximum junction temperature of 175 °C, it operates within a -55 °C to 175 °C range. Key electrical parameters include a continuous collector current of 80 A at 25 °C, a total power dissipation of 238 W at 25 °C, and a thermal resistance junction-to-case of 0.63 °C/W for the IGBT.

Feature Summary

  • Designed specifically for soft commutation and resonant applications
  • Minimized tail current for reduced switching losses
  • Positive VCE(sat) temperature coefficient for safe paralleling
  • Co-packaged freewheeling diode with low forward voltage drop

Applications

  • Induction cooking systems
  • Resonant converters
  • Microwave ovens

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and environmental compliance grade. Confirm that the application environment strictly adheres to soft-switching requirements, as this component is not optimized for hard-switching scenarios. Check for any recent product change notifications regarding manufacturing updates or material substitutions before finalizing procurement orders.

Selection Notes

Select this component when designing high-efficiency resonant circuits where minimizing switching losses during soft commutation is critical. Ensure the drive circuitry supports the required gate charge characteristics and that the thermal management system can handle the specified power dissipation limits. Verify that the operating frequency and load conditions align with the device's dynamic performance curves to maintain optimal efficiency and reliability.

Part Context

This part belongs to the IH series of IGBTs, which are engineered using proprietary trench gate field-stop technology. The series focuses on optimizing both conduction and switching losses for soft-switching topologies. It represents a specialized segment within STMicroelectronics' power transistor portfolio, distinct from general-purpose or high-speed hard-switching variants.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-247 long leads package, and soft-switching optimization. Verify compatibility of the integrated diode's forward voltage and recovery characteristics. Cross-reference with other IH series members if current ratings differ, ensuring the substitute maintains the same thermal and electrical profile for resonant applications.

STGWA40IH65DFSTGWA40IH65DF
$3.80
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