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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO247
- Series：M
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：375 W
- Switching Energy：880µJ (on), 1.57mJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：42ns/130ns
- Test Condition：400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：162 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA50M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 86 A at 25°C. The typical collector-emitter saturation voltage is 1.65 V at 50 A. Power dissipation reaches 272 W in a TO-247 package. Operating temperatures range from -55°C to +175°C, with a minimum short-circuit withstand time of 6 μs.
Feature Summary
- Trench gate field-stop structure for low loss and high efficiency
- Positive VCE(sat) temperature coefficient for safer paralleling
- Soft and fast-recovery antiparallel diode
- 6 μs minimum short-circuit withstand time
Applications
- Inverter systems requiring optimal balance between performance and efficiency
- Industrial motor drives
- Switched-mode power supplies
Procurement Notes
Verify the specific ordering suffix against official STMicroelectronics documentation to confirm exact electrical characteristics and packaging type. Ensure the component matches the required thermal resistance and voltage ratings for the target application before finalizing procurement orders.
Selection Notes
Select this component for applications demanding low conduction losses and robust short-circuit capability. The tight parameter distribution facilitates parallel operation. Verify that the TO-247 package fits the thermal management design and that the 650 V rating exceeds the system's peak voltage requirements.
Part Context
This device belongs to the STMicroelectronics M series of IGBTs. The series is characterized by an advanced proprietary trench gate field-stop structure designed to optimize inverter system performance. It balances low-loss operation with essential short-circuit functionality for industrial applications.
Replacement Considerations
STGWA50HP65FB2: Similar TO-247 package but different series (HB2) with potentially different switching characteristics.
FAQ
What is the minimum short-circuit withstand time?
The device supports a minimum short-circuit withstand time of 6 microseconds.
Does the device have a positive temperature coefficient?
Yes, it features a positive VCE(sat) temperature coefficient which aids in safer paralleling operation.
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.65 V when measured at a collector current of 50 A.
