SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGWA75M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage rating and a continuous collector current of 120 A at 25°C. The typical saturation voltage is 1.65 V at 75 A. Power dissipation reaches 488 W in a TO-247-3 through-hole package. Operating temperature spans -55°C to +175°C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and thermal characteristics. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm current production status and availability timelines before finalizing procurement plans.
Select this component for applications demanding high short-circuit withstand capability and tight parameter distribution. The positive temperature coefficient facilitates parallel operation without active current sharing circuits. Consider the TO-247-3 package for through-hole mounting solutions requiring robust thermal management capabilities.
This device belongs to the STMicroelectronics M series IGBTs, designed for inverter systems where low-loss performance and short-circuit functionality are essential. The series emphasizes efficient energy conversion and reliable operation under stress conditions.
Direct substitutes within the same family include STGW60M65DF2 or STGW40M65DF2 for lower current ratings. Verify pin compatibility and thermal resistance parameters when considering alternative packages or manufacturers.