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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
- Power - Max：469 W
- Switching Energy：2.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：414 nC
- Td (on/off) @ 25°C：84ns/280ns
- Test Condition：400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA80H65DFB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 120 A at 25 °C case temperature. The typical saturation voltage is 1.6 V at 80 A. Total power dissipation reaches 469 W at 25 °C. Thermal resistance junction-to-case is 0.32 °C/W for the IGBT. Operating junction temperature ranges from -55 °C to 175 °C. Gate-emitter voltage limits are ±20 V. The device is housed in a TO-247 long leads package.
Feature Summary
- Advanced trench gate field-stop structure optimizes conduction and switching losses.
- Slightly positive VCE(sat) temperature coefficient enables safe paralleling operation.
- Minimized tail current reduces turn-off switching losses.
- Very fast soft recovery antiparallel diode minimizes reverse recovery energy.
Applications
- Photovoltaic inverters
- High frequency converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the component status remains active production data before finalizing procurement plans. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses. Evaluate the total switching losses at the intended operating frequency and gate resistance. Consider the forward bias safe operating area when designing for high voltage and current transients. Verify compatibility with standard gate drive voltages of 15 V.
Part Context
This part belongs to the STMicroelectronics HB series of trench gate field-stop IGBTs. It shares core electrical characteristics with the STGW80H65DFB but utilizes a distinct TO-247 long leads package configuration. The series is designed to maximize efficiency in frequency converters through optimized parameter distribution.
Replacement Considerations
The STGW80H65DFB offers identical electrical performance but uses a standard TO-247 package. Verify mechanical footprint differences if board space or mounting constraints are critical. No other direct substitutes are documented in the provided source material.
