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The STGWA80H65FB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage (VCE(sat)) of 1.65 V at rated current. Packaged in a TO-247 through-hole format, it supports high-speed switching applications.
Verify the specific suffix against official datasheets to confirm automotive qualification status. The 'A' suffix typically denotes AEC-Q101 compliance, while other variants may differ. Confirm package dimensions and thermal resistance values directly from the manufacturer's documentation before finalizing procurement specifications.
Select this component for designs requiring a balance between conduction and switching losses. Ensure the application utilizes the TO-247 package's thermal capabilities. Verify that the required operating frequency aligns with the device's high-speed switching characteristics and that the gate drive voltage remains within the ±20 V limit.
This part belongs to STMicroelectronics' HB series of IGBTs, designed to maximize efficiency in frequency converters. It represents an evolution in trench gate field-stop technology, offering tighter parameter distribution compared to older generations. The series targets industrial and automotive sectors demanding reliable high-power switching solutions.
Direct replacements include STGW80H65DFB or STGW80H65DFB-4 for non-automotive contexts. For automotive-grade equivalents, consider STGWA80H65DFBAG. Verify pinout compatibility and thermal performance metrics when substituting.