STGWA80H65FB

STGWA80H65FB

$2.24
  • Description:IGBT TRENCH FS 650V 120A TO247
  • Series:-

SKU:e3e1e00f872a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 120A TO247
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):120 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 80A
  • Power - Max:469 W
  • Switching Energy:2.1mJ (on), 1.5mJ (off)
  • Input Type:Standard
  • Gate Charge:414 nC
  • Td (on/off) @ 25°C:84ns/280ns
  • Test Condition:400V, 80A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

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STGWA80H65FB

Overview

The STGWA80H65FB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage (VCE(sat)) of 1.65 V at rated current. Packaged in a TO-247 through-hole format, it supports high-speed switching applications.

Feature Summary

  • Advanced trench gate field-stop structure for optimized efficiency
  • Positive VCE(sat) temperature coefficient for safe paralleling
  • Very fast soft recovery antiparallel diode

Applications

  • Frequency converters
  • Industrial motor drives
  • High-efficiency power supplies

Procurement Notes

Verify the specific suffix against official datasheets to confirm automotive qualification status. The 'A' suffix typically denotes AEC-Q101 compliance, while other variants may differ. Confirm package dimensions and thermal resistance values directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a balance between conduction and switching losses. Ensure the application utilizes the TO-247 package's thermal capabilities. Verify that the required operating frequency aligns with the device's high-speed switching characteristics and that the gate drive voltage remains within the ±20 V limit.

Part Context

This part belongs to STMicroelectronics' HB series of IGBTs, designed to maximize efficiency in frequency converters. It represents an evolution in trench gate field-stop technology, offering tighter parameter distribution compared to older generations. The series targets industrial and automotive sectors demanding reliable high-power switching solutions.

Replacement Considerations

Direct replacements include STGW80H65DFB or STGW80H65DFB-4 for non-automotive contexts. For automotive-grade equivalents, consider STGWA80H65DFBAG. Verify pinout compatibility and thermal performance metrics when substituting.

STGWA80H65FBSTGWA80H65FB
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