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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：167 W
- Switching Energy：209µJ (on), 261µJ (off)
- Input Type：Standard
- Gate Charge：115 nC
- Td (on/off) @ 25°C：42.5ns/177ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT20H60DF is a single N-channel IGBT from the H series, utilizing trench gate field-stop technology. It features a TO-3PFL package with through-hole mounting. Key electrical parameters include a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25°C. The saturation voltage (VCEsat) is typically 1.8 V. Maximum power dissipation is 52 W. Operating temperature ranges from -55°C to +175°C junction temperature.
Feature Summary
- Advanced trench gate field-stop structure for optimized switching performance
- Slightly positive VCE(sat) temperature coefficient for safe paralleling
- Soft and fast recovery antiparallel diode integrated
- Short-circuit rated capability
Applications
- High switching frequency converters
- Motor drives
- Power supplies
Procurement Notes
Verify component authenticity via official STMicroelectronics channels or authorized distributors. Confirm lot codes and traceability documentation match datasheet specifications. Check for RoHS compliance status as indicated in official product declarations. Ensure storage conditions adhere to manufacturer guidelines to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select this component for designs requiring high-speed switching with low conduction losses. The TO-3PFL package suits applications needing robust thermal management in through-hole layouts. Compare VCEsat and switching times against specific circuit requirements. Ensure gate drive capabilities align with the device's input capacitance and recommended operating conditions for optimal efficiency.
Part Context
This part belongs to the STGW H-series IGBT family, designed for high-efficiency applications. It shares technological roots with other trench gate field-stop devices but differs in packaging and current ratings compared to TO-247 variants like the STGW20H60DF. The H series emphasizes a balance between conduction and switching losses.
Replacement Considerations
Direct pin-compatible replacements may include other STMicroelectronics IGBTs in TO-3PFL packages with similar 600V/20A ratings. Verify electrical parameters such as VCEsat, switching times, and thermal resistance before substitution. Cross-reference with distributor databases for equivalent parts from other manufacturers if availability is constrained.
