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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-3P
- Series：HB
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：168 W
- Switching Energy：170µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：-/139ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT20HP65FB is a trench gate field-stop IGBT from the HB series by STMicroelectronics. It features a 650 V collector-emitter voltage (VCEO) and a continuous collector current (Ic) of 20 A at 25°C. The device utilizes an advanced proprietary trench gate structure to optimize the balance between conduction and switching losses, achieving high efficiency in frequency converters. Key electrical parameters include a maximum power dissipation (Pd) of 175 W, a typical saturation voltage (VCEsat) of 1.6 V at 40 A, and a maximum junction temperature (Tj) of 175°C. It is housed in a TO-247 package for through-hole mounting.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Positive VCEsat temperature coefficient enabling safe paralleling
- Very fast soft recovery antiparallel diode with minimized tail current
Applications
- High-frequency inverters
- Switched-mode power supplies (SMPS)
- Motor drives
Procurement Notes
Verify the specific suffix 'HB' or 'FB' against the official datasheet to confirm the exact variant, as these denote specific parameter distributions. Ensure the component matches the required thermal resistance and voltage ratings for the target application before procurement.
Selection Notes
Select this component for designs requiring a balance between low conduction loss and fast switching speed. The positive temperature coefficient facilitates parallel operation for higher current applications. Verify that the gate drive circuitry supports the specified switching characteristics and that the thermal management system can handle the 175 W power dissipation.
Part Context
This part belongs to the HB series of IGBTs, which are designed to maximize efficiency in frequency converters. The series represents an optimum compromise between conduction and switching losses, making it suitable for high-performance power electronics applications where efficiency and reliability are critical.
Replacement Considerations
Direct replacements should be sought within the same HB series or comparable trench gate field-stop IGBTs from other manufacturers with matching VCEO, Ic, and package dimensions. Verify pinout compatibility and ensure equivalent thermal and electrical performance characteristics.
