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The STGWT30V60DF is a Trench gate field-stop IGBT from the V series, rated at 600 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary trench gate field-stop structure to optimize conduction and switching losses for very high frequency converters. The device features tail-less switching off, a typical saturation voltage of 1.85 V at 30 A, and a positive VCE(sat) temperature coefficient. It includes a very fast soft recovery antiparallel diode and supports safe paralleling due to tight parameter distribution. Maximum junction temperature is 175 °C.
Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm package type (TO-247 vs D²PAK) and ordering suffixes match design requirements. Check datasheet revision history for updates on electrical parameters and package dimensions. Ensure environmental compliance grades align with project specifications.
Select based on required switching frequency and thermal management capabilities. Consider the trade-off between low saturation voltage and switching losses inherent to the V series architecture. Evaluate thermal resistance values for heatsink design. Verify gate drive compatibility with the specified threshold voltage and total gate charge requirements.
This component belongs to the STMicroelectronics V series IGBT family, designed specifically for very high frequency converter applications. It shares core technology with models like STGB30V60DF but differs in packaging. The series emphasizes an optimum compromise between conduction and switching losses to maximize system efficiency.
STGB30V60DF (D²PAK package variant)
The maximum operating junction temperature is 175 °C.
No, the device features tail-less switching off characteristics.
Yes, it incorporates a very fast soft recovery antiparallel diode.