STGWT30V60DF

STGWT30V60DF

$3.80
  • Description:IGBT TRENCH FS 600V 60A TO-3P
  • Series:-

SKU:adaec035b472 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 60A TO-3P
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
  • Power - Max:258 W
  • Switching Energy:383µJ (on), 233µJ (off)
  • Input Type:Standard
  • Gate Charge:163 nC
  • Td (on/off) @ 25°C:45ns/189ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):53 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Download product information

STGWT30V60DF

Overview

The STGWT30V60DF is a Trench gate field-stop IGBT from the V series, rated at 600 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary trench gate field-stop structure to optimize conduction and switching losses for very high frequency converters. The device features tail-less switching off, a typical saturation voltage of 1.85 V at 30 A, and a positive VCE(sat) temperature coefficient. It includes a very fast soft recovery antiparallel diode and supports safe paralleling due to tight parameter distribution. Maximum junction temperature is 175 °C.

Feature Summary

  • Advanced proprietary trench gate field-stop structure for optimized efficiency in high frequency applications
  • Tail-less switching off characteristics with very fast soft recovery antiparallel diode
  • Positive VCE(sat) temperature coefficient and tight parameter distribution enabling safer paralleling operation

Applications

  • Photovoltaic inverters
  • Uninterruptible power supply
  • Welding equipment
  • Power factor correction
  • Very high frequency converters

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm package type (TO-247 vs D²PAK) and ordering suffixes match design requirements. Check datasheet revision history for updates on electrical parameters and package dimensions. Ensure environmental compliance grades align with project specifications.

Selection Notes

Select based on required switching frequency and thermal management capabilities. Consider the trade-off between low saturation voltage and switching losses inherent to the V series architecture. Evaluate thermal resistance values for heatsink design. Verify gate drive compatibility with the specified threshold voltage and total gate charge requirements.

Part Context

This component belongs to the STMicroelectronics V series IGBT family, designed specifically for very high frequency converter applications. It shares core technology with models like STGB30V60DF but differs in packaging. The series emphasizes an optimum compromise between conduction and switching losses to maximize system efficiency.

Replacement Considerations

STGB30V60DF (D²PAK package variant)

FAQ

What is the maximum junction temperature for this IGBT?

The maximum operating junction temperature is 175 °C.

Does this device exhibit tail current during turn-off?

No, the device features tail-less switching off characteristics.

Is the antiparallel diode suitable for high-speed applications?

Yes, it incorporates a very fast soft recovery antiparallel diode.

STGWT30V60DFSTGWT30V60DF
$3.80
Buy Now