STGWT80H65FB

Overview

The STGWT80H65FB is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure for high-speed performance. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 650 V and a continuous collector current (Ic) of 80 A. The device features a maximum power dissipation (Pd) of 469 W and a low collector-emitter saturation voltage (VceSAT) of 2 V. It operates within a temperature range of -55°C to 175°C and supports switching speeds up to 1 MHz. The component is housed in a TO-3P package with three pins for through-hole mounting.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimized switching characteristics
• High-speed operation capability suitable for demanding power applications
• Robust thermal performance with a maximum junction temperature of 175°C
• Low saturation voltage for improved efficiency in conduction states

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• High-frequency switching power converters

Procurement Notes

Verify the specific suffix 'FB' against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the TO-3P package dimensions match your thermal management design requirements. Check for RoHS compliance status as indicated in the datasheet. Ensure the procurement channel provides valid traceability for this industrial-grade component.

Selection Notes

Select the STGWT80H65FB when high-speed switching and robust 650 V blocking capability are required in a through-hole format. Compare its 80 A current rating and 469 W power dissipation against system load demands. Consider the TO-3P package size relative to available board space and heatsinking solutions. Evaluate the 1 MHz switching speed suitability for your specific frequency application constraints.

Part Context

This IGBT belongs to the HB series, which focuses on high-speed performance using trench gate technology. It complements other variants like the STGW80H65DFB, differing primarily in package type (TO-3P vs. TO-247). The series targets applications requiring fast switching times and efficient power handling in medium-power industrial systems.

Replacement Considerations

Direct substitutes may include other STMicroelectronics HB series IGBTs with similar voltage and current ratings, such as the STGWT40H65FB for lower current needs. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with competitor equivalents only if electrical parameters and package dimensions are identical.