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The STGYA75H120DF2 is a high-speed IGBT from the H series, utilizing an advanced trench gate field-stop structure. It features a 1200 V collector-emitter voltage and a continuous collector current of 75 A at TC = 100 °C. The device operates with a maximum junction temperature of 175 °C and offers a typical saturation voltage of 2.1 V at IC = 75 A. It includes a very fast recovery antiparallel diode and supports a short-circuit withstand time of 5 μs. Packaged in Max247 long leads for through-hole mounting, it provides low thermal resistance and tight parameter distribution.
Verify the specific datasheet revision against the manufacturer's official records before finalizing designs. Confirm that the Max247 long leads package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating conditions.
Select this component when designing high-efficiency converters requiring robust short-circuit protection up to 5 μs. The positive temperature coefficient facilitates reliable parallel operation for higher current applications. Consider the 175 °C maximum junction temperature capability for demanding thermal environments compared to standard 150 °C devices.
This device belongs to the H series of IGBTs developed by STMicroelectronics. The series focuses on achieving an optimum compromise between conduction and switching losses. It utilizes proprietary trench gate field-stop technology to maximize converter efficiency across various power levels.
STGW75H120DF2