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STI260N6F6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 75V 120A I2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STI260N6F6
- Description：MOSFET N-CH 75V 120A I2PAK
- Series：DeepGATE™, STripFET™ VI
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：183 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for STI260N6F6
Single FETs, MOSFETs Overview
The STI260N6F6 is an N-channel enhancement mode Power MOSFET from the STripFET VI DeepGATE series. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 120 A at case temperature. The device offers a typical on-resistance (Rds(on)) of 2.4 mΩ. It is housed in an I2PAK surface-mount package with three pins. Key electrical limits include a gate-source voltage range of -20 V to +20 V, a power dissipation of 300 W, and an operating temperature range from -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes STMicroelectronics' DeepGATE technology for optimized switching performance
- Designed for high-efficiency power conversion applications
- Robust thermal management capabilities within the I2PAK package
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the received part matches the STI260N6F6 designation exactly. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions prior to final design integration.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high current handling in a single-chip solution. Ensure the application environment stays within the specified thermal limits. Consider the I2PAK footprint compatibility during PCB layout planning.
Single FETs, MOSFETs Part Context
This device belongs to the STripFET VI family, representing advanced planar technology from STMicroelectronics. It is designed to replace older generation MOSFETs in various industrial and consumer electronics applications where efficiency and reliability are critical.
Single FETs, MOSFETs Replacement Considerations
The STP260N6F6 is a documented equivalent variant within the same product line. Verify pinout and electrical specifications match before substitution.
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