ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
STL13NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 10A PWRFLAT HV. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STL13NM60N
- Description：MOSFET N-CH 600V 10A PWRFLAT HV
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 90W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerFlat™ (8x8) HV
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for STL13NM60N
Single FETs, MOSFETs Overview
STL13NM60N is an N-channel Power MOSFET from STMicroelectronics utilizing MDmesh II technology. It features a 600V drain-source voltage and 2.2A continuous drain current. The device offers a typical on-resistance of 1.5 Ohms and operates within a junction temperature range of -55°C to 150°C. Packaged in the compact PowerFLAT 3.3x3.3 HV surface-mount format, it integrates low gate charge and input capacitance for efficient switching performance.
Single FETs, MOSFETs Feature Summary
- MDmesh II technology combines vertical structure with strip layout for optimized electrical characteristics
- PowerFLAT 3.3x3.3 HV package provides high thermal efficiency and space-saving design
- Low gate input resistance and reduced switching losses enhance converter efficiency
Single FETs, MOSFETs Applications
- High-efficiency power converters
- Switching mode power supplies (SMPS)
- Industrial power management systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the specific package variant matches the PowerFLAT 3.3x3.3 HV designation. Ensure compliance with RoHS standards and check for any recent product change notices regarding assembly sites or marking layouts before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust 600V blocking capability in a compact footprint. The 1.5 Ohm on-resistance suits moderate current loads up to 2.2A where thermal constraints favor surface-mount integration. Evaluate thermal dissipation requirements against the PowerFLAT package capabilities for optimal heat sinking strategies.
Single FETs, MOSFETs Part Context
Part of the MDmesh II family, STL13NM60N represents second-generation silicon MOSFET technology. It succeeds earlier MDmesh iterations by offering improved on-resistance per area while maintaining reliability. This series targets industrial and consumer electronics needing efficient power conversion in constrained spaces.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include STF13NM60N (TO-220FP) and STD13NM60N (DPAK). Verify pinout compatibility and thermal interface requirements when transitioning between through-hole and surface-mount packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
