STN3N40K3

Single FETs, MOSFETs Overview

The STN3N40K3 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh K3 technology with a new optimized vertical structure. It features a 400 V breakdown voltage, a typical on-resistance of 3.1 Ohms, and a continuous drain current of 1.8 A. Packaged in SOT-223, the device offers extremely low on-resistance, superior dynamic performance, and high avalanche capability. Key electrical attributes include very low intrinsic capacitance and Zener protection, making it suitable for demanding power conversion applications.

Single FETs, MOSFETs Feature Summary

• Extremely high dv/dt capability
• Improved diode reverse recovery characteristics
• Very low intrinsic capacitance
• Zener-protected gate structure

Single FETs, MOSFETs Applications

• Power conversion systems
• High-voltage switching applications
• Demanding industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure correct package and temperature grade. Confirm that the active status aligns with current production schedules. Check for any specific handling requirements related to the SOT-223 package during assembly. Ensure design compatibility with the 400 V rating and 1.8 A current limits for your target application.

Single FETs, MOSFETs Selection Notes

Select this component when high dv/dt immunity and low intrinsic capacitance are critical for system stability. The MDmesh K3 technology provides a balance of low on-resistance and robust avalanche performance. Consider the SOT-223 package constraints for thermal management and board space. Evaluate the 3.1 Ohm typical resistance against efficiency requirements at the intended operating current levels.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh K3 Power MOSFET portfolio, which represents an evolution of STMicroelectronics' MDmesh technology. The series focuses on improving vertical structures to enhance dynamic performance and reduce losses. It complements other high-voltage solutions in the company's discrete semiconductor lineup, targeting efficiency improvements in modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 400 V rating, N-channel configuration, and SOT-223 package. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other MDmesh K3 variants or SuperMESH devices from the same manufacturer if pin-compatible alternatives are required.