STP08IE120F4

Overview

The STP08IE120F4 is an Emitter Switched Bipolar Transistor (ESBT) manufactured using Monolithic ESBT Technology. It features a high voltage and high current Cascode configuration with a collector-source breakdown voltage of 1200 V and a continuous collector current of 8 A. The device exhibits a low equivalent on-resistance of 0.10 Ω, enabling very fast switching up to 150 kHz. Designed for gate-driven topologies, it offers squared RBSOA up to 1200 V, very low input capacitance driven by RG = 47Ω, and minimal turn-off crossover time.

Feature Summary

• Monolithic ESBT technology providing optimized performance in high frequency and high voltage applications
• Cascode configuration delivering low equivalent on-resistance and high current capability
• Squared Reverse Biased Safe Operating Area (RBSOA) extending up to 1200 V
• Very low input capacitance and minimal turn-off crossover time for efficient high-speed operation

Applications

• Auxiliary Switched Mode Power Supplies (SMPS) for three-phase mains systems
• Gate-driven power conversion topologies requiring high-frequency operation
• High-voltage industrial power electronics applications

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the TO220FP-4L package tube packing aligns with assembly requirements. Ensure design reviews account for the preliminary nature of the original datasheet release from November 2006, checking for any subsequent updates or specific handling instructions related to its legacy status.

Selection Notes

Select this component for designs requiring a 1200 V rating combined with an 8 A continuous current capacity. The low on-resistance and fast switching characteristics make it suitable for applications operating at frequencies up to 150 kHz. Consider the gate drive requirements, specifically the low input capacitance when driven by a 47Ω resistor, to ensure compatibility with existing control circuitry.

Part Context

This device belongs to the ESBT family, utilizing Monolithic ESBT Technology developed by STMicroelectronics. This technology integrates bipolar and MOS structures to achieve superior performance in high-frequency, high-voltage environments compared to standard IGBTs or MOSFETs. The part is housed in a lead-free ECOPACK compliant TO220FP-4L package.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product is marked obsolete, consult official STMicroelectronics channels for potential end-of-life management options or recommended alternative series within the current ESBT portfolio.