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STP11NM65N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 11A TO-220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP11NM65N
- Description：MOSFET N-CH 650V 11A TO-220
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：455mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP11NM65N
Single FETs, MOSFETs Overview
The STP11NM65N is an N-channel enhancement mode power MOSFET from STMicroelectronics, utilizing MDmesh technology. It features a 650V drain-source voltage rating and a continuous drain current of 11A. The device offers a maximum on-resistance of 480 mOhms at 25°C. It is housed in a TO-220 package with three pins for through-hole mounting. The component supports a maximum power dissipation of 90W and operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- MDmesh technology integration for low on-resistance and gate charge
- High voltage capability suitable for demanding power applications
- Robust avalanche performance verified by 100% testing
Single FETs, MOSFETs Applications
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix or variant code against the manufacturer's official datasheet to ensure exact electrical matching. Confirm RoHS compliance status as regulatory requirements may vary by production batch. Check for obsolescence notices or lifecycle status updates directly from STMicroelectronics before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a 650V rating and 11A continuous current are required in a through-hole package. Compare the 480 mOhm on-resistance against thermal management capabilities in the target design. Ensure the switching frequency requirements align with the device's turn-on and turn-off characteristics for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh family of power MOSFETs designed for high-efficiency power conversion. It serves as a discrete switching element in medium-power electronic systems. The TO-220 package provides mechanical stability and thermal dissipation advantages over surface-mount alternatives for certain industrial designs.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify pinout compatibility and thermal resistance values when substituting with similar N-channel MOSFETs from other manufacturers.
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