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STP200NF04L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 40V 120A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP200NF04L
- Description：MOSFET N-CH 40V 120A TO220AB
- Series：STripFET™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：6400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP200NF04L
Single FETs, MOSFETs Overview
The STP200NF04L is an N-channel Power MOSFET utilizing the STripFET II process, designed for automotive applications. It features a 40V drain-source voltage rating and a maximum continuous drain current of 120A at case temperatures up to 100°C. The device offers a typical on-resistance of 3mΩ (max 3.8mΩ) with standard threshold drive capabilities. Key electrical parameters include a pulsed drain current of 480A, single pulse avalanche energy of 1.4J, and a peak diode recovery voltage slope of 3.6V/ns.
Single FETs, MOSFETs Feature Summary
- High packing density achieved through Single Feature Size strip-based process
- Rugged avalanche characteristics verified by 100% avalanche testing
- Low threshold drive requirements suitable for standard logic interfaces
Single FETs, MOSFETs Applications
- Automotive power switching circuits
- High current applications requiring high switching speed
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required for your design, as the STB200NF04L-1 denotes the I²PAK tube version while the STP200NF04L refers to the TO-220 tube. Confirm that the 3.8mΩ maximum RDS(on) specification aligns with your thermal management calculations. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and ruggedness are critical for automotive or high-current environments. The standard threshold drive simplifies gate driver selection compared to logic-level devices. Consider the TO-220 package for through-hole mounting or D²PAK/I²PAK variants if surface-mount assembly is preferred for the same electrical performance.
Single FETs, MOSFETs Part Context
This part belongs to the STripFET II family, which employs a unique strip-based process to minimize on-resistance while maintaining manufacturing reproducibility. It serves as a robust solution for medium-voltage power switching, offering improved packing density over previous generations without compromising avalanche ruggedness.
Single FETs, MOSFETs Replacement Considerations
The STB200NF04L and STB200NF04L-1 share identical electrical specifications but differ in packaging (D²PAK tape & reel vs. I²PAK tube). Verify pinout compatibility before substituting between these variants.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
