STP26N60DM6

$4.11

Description：MOSFET N-CH 600V 18A TO220
Series：MDmesh™ DM6
Mfr：STMicroelectronics
Package：Tube

SKU:650d498fee26 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STP26N60DM6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 18A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP26N60DM6

Description：MOSFET N-CH 600V 18A TO220
Series：MDmesh™ DM6
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：195mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：940 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：130W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP26N60DM6

STP26N60DM6

Single FETs, MOSFETs Overview

The STP26N60DM6 is an N-channel enhancement mode Power MOSFET utilizing MDmesh DM6 super-junction technology. It features a 600 V drain-source breakdown voltage and a maximum continuous drain current of 18 A at 25 °C case temperature. The device offers a typical on-resistance of 165 mΩ with a maximum rating of 195 mΩ. Key electrical parameters include a total gate charge of 24 nC, input capacitance of 940 pF, and a fast-recovery body diode with a reverse recovery time of 100 ns. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Integrates a fast-recovery body diode with low reverse recovery charge and time for high-efficiency switching.
Features extremely high dv/dt ruggedness and is 100% avalanche tested for robust performance.
Incorporates Zener protection on the gate terminal to prevent overvoltage damage.
Delivers lower RDS(on) per unit area compared to previous MDmesh generations.

Single FETs, MOSFETs Applications

ZVS phase-shift converters
High-efficiency bridge topologies
Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-220 Type A) against mechanical drawings before integration. Confirm that thermal management solutions align with the specified junction-to-case thermal resistance values under actual operating conditions. Ensure sourcing channels provide authentic components with traceable documentation to guarantee compliance with absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with optimized switching losses. The MDmesh DM6 technology provides superior efficiency in resonant topologies compared to older silicon technologies. Consider the 18 A continuous current limit and thermal dissipation requirements when sizing heatsinks for the TO-220 package.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh DM6 series of high-voltage Power MOSFETs from STMicroelectronics. The series is engineered for demanding power conversion applications where efficiency and reliability are critical. It represents an evolution in super-junction technology, offering improved performance metrics over prior generations while maintaining compatibility with standard packaging formats.