STP5NB60

$0.57

Description：MOSFET N-CH 600V 5A TO220AB
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube

SKU:c851d7c7ea79 Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STP5NB60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 5A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP5NB60

Description：MOSFET N-CH 600V 5A TO220AB
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：884 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP5NB60

STP5NB60

Single FETs, MOSFETs Overview

The STP5NB60 is an N-channel PowerMESH MOSFET rated for 600V drain-source voltage and 5A continuous drain current at 25°C case temperature. It features a typical on-resistance of 1.8Ω, with a maximum rating below 2.0Ω. The device utilizes the MESH OVERLAY process to achieve extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances. It is avalanche tested and available in TO-220 and TO-220FP packages.

Single FETs, MOSFETs Feature Summary

Utilizes advanced MESH OVERLAY process for lowest RDS(on) per area
Features extremely high dv/dt capability and exceptional avalanche performance
Minimized gate charge and very low intrinsic capacitances for optimized switching

Single FETs, MOSFETs Applications

High current, high speed switching
Switch mode power supplies (SMPS)
DC-AC converters for welding equipment
Uninterruptible power supplies (UPS)
Motor drive applications

Single FETs, MOSFETs Procurement Notes

Verify component status as the datasheet indicates this product is obsolete. Confirm package availability (TO-220 or TO-220FP) against specific design requirements. Ensure replacement strategies are evaluated due to end-of-life status. Cross-reference absolute maximum ratings and thermal data with current system constraints before integration.

Single FETs, MOSFETs Selection Notes

Select based on 600V breakdown voltage and 5A continuous current capacity at 25°C case temperature. Consider the 1.8Ω typical on-resistance for conduction loss calculations. Evaluate thermal resistance values for both TO-220 and TO-220FP packages relative to heat dissipation needs. Verify compatibility with high dv/dt environments and avalanche energy requirements.

Single FETs, MOSFETs Part Context

This component belongs to the STP5 series of N-channel PowerMESH MOSFETs from STMicroelectronics. It represents an advanced family designed using high-voltage MESH OVERLAY technology. The series emphasizes low on-resistance, high switching speed, and robust avalanche characteristics for power electronics applications.