STPSC2H12B-TR1

Single Diodes Overview

The STPSC2H12B-TR1 is a silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. It features a maximum repetitive reverse voltage of 1200 V and an average rectified forward current of 5 A. The device is housed in a surface-mount DPAK HV package. Key electrical characteristics include a maximum forward voltage of 1.5 V at 2 A and a low junction capacitance of 30 pF at 25°C. The component operates within a temperature range of -55°C to +175°C.

Single Diodes Feature Summary

• Utilizes silicon carbide substrate technology for superior physical properties compared to standard silicon
• Provides ultrahigh performance power Schottky rectification with reduced forward voltage drop
• Designed for surface mount installation in compact electronic assemblies

Single Diodes Applications

• High-frequency switching power supplies
• DC-DC converter circuits
• Uninterruptible power supply (UPS) systems

Single Diodes Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing, as manufacturing details may vary. Confirm that the DPAK HV package dimensions match your PCB footprint requirements. Check for lifecycle status updates, as availability can change. Ensure thermal management solutions are adequate for the operating temperature range specified in the official documentation.

Single Diodes Selection Notes

Select this component for applications requiring high-voltage blocking capability and efficient rectification. The SiC material offers advantages over silicon in terms of switching speed and thermal stability. Consider the 1200 V rating for safety margins in higher voltage systems. Evaluate the 5 A current rating against peak load requirements to ensure reliable operation under all expected conditions.

Single Diodes Part Context

This part belongs to the STPSC series of silicon carbide Schottky diodes from STMicroelectronics. The series includes various voltage and current ratings, such as the STPSC10H12G-TR. These devices are designed to replace standard silicon diodes in high-performance power electronics, offering improved efficiency and reduced system size due to lower losses and faster switching characteristics inherent to SiC technology.

Single Diodes Replacement Considerations

Direct substitutes should be sought from the same STPSC family or equivalent SiC Schottky diodes with matching 1200 V and 5 A ratings. Verify pinout compatibility for the DPAK package before substitution. Cross-reference specifications for forward voltage and junction capacitance to ensure circuit performance remains within design limits.