STS01DTP06

$0.37

Description：TRANS NPN/PNP 30V 3A 8-SOIC
Series：-

SKU:0384c73ac323 Category: Bipolar Transistor Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：TRANS NPN/PNP 30V 3A 8-SOIC
Series：-
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
Transistor Type：1 NPN, 1 PNP
Current - Collector (Ic) (Max)：3A
Voltage - Collector Emitter Breakdown (Max)：30V
Vce Saturation (Max) @ Ib, Ic：700mV @ 100mA, 2A
Current - Collector Cutoff (Max)：1µA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A, 2V
Power - Max：2W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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STS01DTP06

Overview

The STS01DTP06 is a hybrid dual NPN-PNP complementary power bipolar transistor array manufactured using low voltage planar technology. It features a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a continuous collector current of 3 A. The device operates within a temperature range starting at -65 C and provides a power dissipation capacity of 2 W. Packaged in an 8-SOIC surface mount format with separated terminals, it supports high assembly flexibility for integrated circuit applications.

Feature Summary

Hybrid dual complementary NPN-PNP configuration
Low voltage planar technology construction
Dual island SO-8 package with separated terminals

Applications

Push-Pull amplifier circuits
High-performance switching applications
Integrated circuit modules requiring complementary pairs

Procurement Notes

Verify the specific datasheet version to confirm electrical characteristics match design requirements. Ensure the 8-SOIC package footprint aligns with PCB layout constraints. Confirm thermal management capabilities support the 2 W power dissipation rating under intended operating conditions. Validate that the -65 C minimum temperature specification meets environmental standards.

Selection Notes

Select this component when a matched NPN-PNP pair is required in a compact surface-mount form factor. The separated terminal design offers assembly flexibility compared to standard configurations. Consider the 3 A current rating and 60 V breakdown voltage for appropriate load handling. Verify compatibility with low voltage planar processes if specific manufacturing traits are needed.

Part Context

This part belongs to the Bipolar (BJT) Transistor Arrays category from STMicroelectronics. It serves as a complementary power transistor solution, integrating both NPN and PNP elements into a single unit. The design targets applications needing efficient space utilization while maintaining robust power handling capabilities through its specific planar technology implementation.