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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4A 8SOIC
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：55mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1030pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS4DNF60L is an N-channel Power MOSFET from STMicroelectronics, utilizing the STripFET II technology. It features a 60V drain-source voltage rating and a maximum continuous drain current of 4A at 25°C. The device exhibits a low on-resistance (RDS(on)) of 0.045 Ohm. Packaged in an SO-8 surface-mount outline, it is designed for high packing density and rugged avalanche characteristics. The component operates within a junction temperature range of -55°C to 150°C and supports automated assembly processes.
Feature Summary
- Low threshold drive capability
- Standard outline for easy automated surface mount assembly
Applications
- Switching applications
Procurement Notes
Verify the specific ordering code against official STMicroelectronics documentation to ensure correct package and marking identification. Confirm that the required electrical ratings align with the target circuit design parameters before procurement. Check for any recent product change notices or lifecycle status updates directly from the manufacturer's official channels.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance and robust avalanche performance is required. Ensure the application demands fit within the 60V breakdown and 4A continuous current limits. Consider the SO-8 package constraints for thermal dissipation and board space availability during the design phase.
Part Context
This part belongs to the STripFET II family of power MOSFETs developed by STMicroelectronics. The series utilizes a unique single feature size strip-based process to achieve high packing density and manufacturing reproducibility. This technology focuses on minimizing on-resistance while maintaining ruggedness for reliable operation in various power switching environments.
Replacement Considerations
Consult official STMicroelectronics substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications carefully if considering non-ST components to ensure functional compatibility without modifying the existing circuit layout.
