STTH20003TV1

$23.40

Description：DIODE MODULE GP 300V 100A ISOTOP
Series：-

SKU:14d1cb66f119 Category: Diode Arrays Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STTH20003TV1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is DIODE MODULE GP 300V 100A ISOTOP. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for STTH20003TV1

Description：DIODE MODULE GP 300V 100A ISOTOP
Series：-
Mfr：STMicroelectronics
Package：Tube
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：300 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：90 ns
Current - Reverse Leakage @ Vr：200 µA @ 300 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Chassis Mount
Package / Case：ISOTOP
Supplier Device Package：ISOTOP®
Grade：-
Qualification：-

Diode Arrays datasheet and documents for STTH20003TV1

STTH20003TV1

Diode Arrays Overview

The STTH20003TV1 is a dual isolated diode module from STMicroelectronics, packaged in the ISOTOP™ form factor. It features two independent rectifiers, each rated for an average forward current of 100A, resulting in a total module rating of 200A. The device supports a repetitive reverse voltage (Vrrm) and DC rated voltage of 300V. It exhibits a maximum forward voltage drop of 1.2V at rated conditions and can withstand a forward surge current of 1kA. The component operates within a junction temperature range up to 150°C and utilizes a four-pin chassis mount configuration.

Diode Arrays Feature Summary

Dual isolated structure with two independent rectifier circuits
Soft recovery characteristics combined with fast switching speed
ISOTOP™ packaging designed for low thermal resistance and efficient heat dissipation

Diode Arrays Applications

Switch Mode Power Supplies (SMPS)
High frequency DC to DC converters
Low voltage output rectification stages

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and package variations. Ensure that the procurement documentation explicitly references the STTH20003TV1 part number to distinguish it from similar series components. Confirm compliance with relevant environmental directives as stated in the product legislation documents provided by STMicroelectronics prior to finalizing acquisition.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling in compact power conversion systems. The dual isolated design facilitates synchronous rectification or freewheeling configurations in multi-phase converters. Consider the 300V blocking capability and 100A per leg rating when designing for industrial or server power supply architectures where thermal management and switching efficiency are critical performance drivers.

Diode Arrays Part Context

This device belongs to STMicroelectronics' ultrafast diode portfolio, specifically engineered for secondary side rectification. The ISOTOP™ technology integrates the semiconductor die directly onto a copper baseplate, minimizing parasitic inductance and improving thermal performance compared to traditional discrete packages. This context positions the part as a solution for modern, high-density power electronics demanding reliability and reduced footprint.

Diode Arrays Replacement Considerations

Consult the official STMicroelectronics replacement guide for verified substitute part numbers. Cross-reference pinout compatibility and thermal resistance values when evaluating alternatives. Do not assume functional equivalence based solely on voltage and current ratings without verifying internal structure and recovery characteristics.