STW18N60DM2

$2.98

Description：MOSFET N-CH 600V 12A TO247
Series：MDmesh™ DM2
Mfr：STMicroelectronics
Package：Tube

SKU:2ebdcd0c002f Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STW18N60DM2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 12A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW18N60DM2

Description：MOSFET N-CH 600V 12A TO247
Series：MDmesh™ DM2
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for STW18N60DM2

STW18N60DM2

Single FETs, MOSFETs Overview

The STW18N60DM2 is an N-channel Power MOSFET from the MDmesh™ DM2 series, housed in a TO-247 package. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 12 A at Tcase = 25 °C. The typical on-resistance (RDS(on)) is 0.260 Ω, with a maximum of 0.295 Ω at VGS = 10 V and ID = 6 A. Total gate charge (Qg) is typically 20 nC at VDD = 480 V and ID = 12 A. The device supports a peak diode recovery voltage slope (dv/dt) of 40 V/ns and includes Zener protection.

Single FETs, MOSFETs Feature Summary

Fast-recovery body diode with low reverse recovery charge and time
Extremely low gate charge and input capacitance for optimized switching
100% avalanche tested for ruggedness
Zener-protected gate structure

Single FETs, MOSFETs Applications

High efficiency converters
Bridge topologies
ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific order code against the manufacturer's datasheet to ensure correct technical specifications. Confirm that the TO-247 tube packing matches the required assembly process. Check for environmental compliance grades such as ECOPACK if restricted substances are a concern. Ensure the component status is listed as full production before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling and efficient switching performance. The MDmesh DM2 technology provides a balance of low on-resistance and fast recovery characteristics. Consider the thermal resistance values when designing heat dissipation solutions. Verify that the gate drive voltage requirements align with the specified RDS(on) test conditions.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh™ DM2 family of power MOSFETs developed by STMicroelectronics. The series utilizes strip layout and improved vertical structures to achieve low on-resistance and optimized switching. These devices are designed for demanding high-efficiency converter applications where reliability and performance are critical.