STW18NM80

Single FETs, MOSFETs Overview

The STW18NM80 is an N-channel Power MOSFET utilizing MDmesh technology, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 17 A at 25°C. The device exhibits a maximum on-resistance of 295 mOhms. It operates within a temperature range of -65°C to +150°C with a power dissipation rating of 190 W. Key electrical characteristics include a gate-source voltage limit of ±30 V, a gate charge of 70 nC, and a threshold voltage of 3 V. The component is housed in a TO-247-3 package.

Single FETs, MOSFETs Feature Summary

• MDmesh technology integration for low on-resistance and high dv/dt performance
• 100% avalanche tested for enhanced reliability
• Low input capacitance and gate charge for efficient switching

Single FETs, MOSFETs Applications

• High voltage motor control systems
• Industrial power supplies
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering code suffixes to ensure compatibility with required thermal and mechanical specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure that the TO-247-3 package dimensions match the target PCB footprint and mounting constraints before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability above 600 V is required alongside moderate current handling. The MDmesh technology offers superior dynamic performance compared to standard planar MOSFETs. Consider the 295 mOhm on-resistance for conduction loss calculations and the 70 nC gate charge for driver selection. Evaluate thermal management requirements based on the 190 W power dissipation rating in the TO-247-3 package.

Single FETs, MOSFETs Part Context

This part belongs to the STW series of N-channel Power MOSFETs from STMicroelectronics. It utilizes the proprietary MDmesh technology, which combines multiple drain processes with a horizontal layout to achieve low on-resistance and excellent avalanche characteristics. The series is designed for applications requiring high efficiency and robust performance in high-voltage environments.

Single FETs, MOSFETs Replacement Considerations

STP18NM80 is a verified substitute offering similar electrical characteristics in a TO-220 package. Verify pinout compatibility and thermal resistance differences when transitioning between TO-247-3 and TO-220 packages.