STW20NB50

Single FETs, MOSFETs Overview

The STW20NB50 is an N-channel PowerMESH MOSFET manufactured by STMicroelectronics, housed in a TO-247 package. It features a drain-source voltage (VDS) of 500 V and a continuous drain current (ID) of 20 A at 25°C case temperature. The typical on-state resistance (RDS(on)) is 0.22 Ω, with a maximum rating of 0.25 Ω. The device supports a pulsed drain current of 80 A and has a total power dissipation of 250 W at 25°C. Gate-source voltage limits are ±30 V. Thermal resistance from junction to case is 0.5 °C/W.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced high-voltage technology with a patent-pending strip layout for low RDS(on) per area.
• Features proprietary edge termination structure providing exceptional avalanche and dv/dt capabilities.
• Includes 100% avalanche testing with repetitive avalanche data available at elevated temperatures.

Single FETs, MOSFETs Applications

• High current, high speed switching
• Switch mode power supplies (SMPS)
• DC-AC converters for welding equipment
• Uninterruptible power supplies (UPS)
• Motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify component status before procurement as the datasheet explicitly marks this part as obsolete. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure design compatibility with legacy systems where direct replacement is necessary. Review updated product portfolios for modern alternatives offering improved performance metrics.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage handling and high-speed switching characteristics. The low intrinsic capacitances and minimized gate charge support efficient operation in switch-mode environments. Consider thermal management requirements given the 250 W dissipation rating and ensure adequate heat sinking to maintain junction temperature within safe operating limits during continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the PowerMESH family of power MOSFETs designed by STMicroelectronics. The series emphasizes optimized performance through specific silicon technologies aimed at reducing conduction losses while maintaining high reliability under harsh electrical conditions. The TO-247 package facilitates through-hole mounting suitable for industrial and power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

As the STW20NB50 is marked obsolete, verify functional equivalents such as the STW20NM50FD which shares similar voltage and current ratings but may differ in specific dynamic parameters and packaging suffixes. Cross-reference pinouts and thermal characteristics carefully when substituting.

Single FETs, MOSFETs FAQ

What is the peak diode recovery voltage slope capability?

The device exhibits a peak diode recovery voltage slope (dv/dt) capability of 4 V/ns.

Is the device tested for avalanche energy?

Yes, the STW20NB50 is 100% avalanche tested, with repetitive avalanche data provided at 100°C.