STW21NM60N

Single FETs, MOSFETs Overview

STW21NM60N is an N-channel Power MOSFET utilizing second-generation MDmesh technology, designed for high-efficiency switching applications. It features a drain-source voltage of 600 V and a maximum on-resistance of 0.22 Ω at 10 V gate drive. The device supports a continuous drain current of 17 A in the TO-247 package. Key electrical parameters include a gate threshold voltage ranging from 2 V to 4 V and a total gate charge of 66 nC. Thermal performance includes a junction-to-case resistance of 0.89 °C/W and a maximum operating junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

• Implements second-generation MDmesh technology combining vertical structure with strip layout for low on-resistance and gate charge
• Features 100% avalanche testing for enhanced ruggedness under inductive load conditions
• Provides low input capacitance and gate charge to optimize switching efficiency
• Includes low gate input resistance to facilitate driver interface compatibility

Single FETs, MOSFETs Applications

• High efficiency power converters
• General switching applications
• Inductive load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm package marking matches W21NM60N for the TO-247 variant. Check datasheet revision history for updates. Ensure environmental compliance requirements align with ECOPACK specifications. Validate thermal management design against specified junction-to-case resistance limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust avalanche capability and low switching losses. Compare on-resistance values across different gate drive voltages to ensure optimal conduction loss performance. Evaluate thermal resistance requirements based on ambient temperature and heat sinking capabilities. Consider gate charge characteristics when designing driver circuits for specific switching frequencies.

Single FETs, MOSFETs Part Context

The STW21NM60N belongs to the STP/F21NM60N series, which includes variants in TO-220, TO-220FP, D2PAK, and I2PAK packages. All series members share identical electrical ratings but differ in physical packaging and thermal characteristics. This specific model utilizes the TO-247 package, offering superior thermal dissipation compared to surface-mount alternatives within the same family.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include STF21NM60N (TO-220FP), STP21NM60N (TO-220), STB21NM60N (D2PAK), and STB21NM60N-1 (D2PAK). Verify pinout compatibility and thermal resistance differences when substituting between package types.