STW3N170

$5.46

Description：MOSFET N-CH 1700V 2.6A TO247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube

SKU:8c2b71fb6c9a Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STW3N170 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 1700V 2.6A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW3N170

Description：MOSFET N-CH 1700V 2.6A TO247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for STW3N170

STW3N170

Single FETs, MOSFETs Overview

The STW3N170 is an N-channel Power MOSFET utilizing the MESH OVERLAY process, housed in a TO-247 package. It features a drain-source voltage of 1700 V and a maximum on-resistance of 13 Ω (typical 7 Ω). The device supports a continuous drain current of 2.6 A at 25 °C case temperature and handles pulsed currents up to 10.4 A. Key electrical parameters include a gate threshold voltage of 3 V to 5 V, total gate charge of 44 nC, and avalanche energy capability of 2 mJ. Thermal resistance from junction to case is 0.78 °C/W.

Single FETs, MOSFETs Feature Summary

High-speed switching performance with minimized intrinsic capacitances and gate charge
Manufactured using consolidated strip-layout-based MESH OVERLAY technology
100% avalanche tested for robustness under unclamped inductive load conditions

Single FETs, MOSFETs Applications

Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet DS11126 Rev 3 to ensure correct part identification. Confirm that the required package type matches the TO-247 specification. Check environmental compliance grades such as ECOPACK if applicable to your project requirements. Ensure that thermal management designs account for the specified junction-to-case thermal resistance values provided in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage power switching circuits requiring reliable performance. The 1700 V rating suits demanding industrial and energy storage environments. Consider the 13 Ω maximum on-resistance for conduction loss calculations. The TO-247 package facilitates effective heat dissipation through the tab connection. Evaluate the 44 nC gate charge for driver circuit compatibility and switching frequency limitations.

Single FETs, MOSFETs Part Context

This device belongs to the PowerMESH Power MOSFET series from STMicroelectronics. It is designed to match or improve upon the performance of comparable standard parts from other manufacturers. The product utilizes advanced silicon technology optimized for high-voltage applications, providing a balance between low on-resistance and fast switching speeds within the TO-247 form factor.