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STW8N90K5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 900V 8A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STW8N90K5
- Description：MOSFET N-CH 900V 8A TO247-3
- Series：MDmesh™ K5
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：130W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STW8N90K5
Single FETs, MOSFETs Overview
The STW8N90K5 is an N-channel MDmesh K5 Power MOSFET housed in a TO-247 package. It features a 900 V drain-source voltage rating and a typical on-resistance of 600 mOhm. The device supports a continuous drain current of 8 A. Designed with proprietary vertical structure technology, it achieves ultra-low gate charge for high efficiency.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh K5 technology based on an innovative proprietary vertical structure
- Provides dramatic reduction in on-resistance compared to previous generations
- Features ultra-low gate charge for superior power density
- Designed for high efficiency in demanding power applications
Single FETs, MOSFETs Applications
- Flyback converters
- LED lighting systems
- High-efficiency power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering code when sourcing. Confirm that the TO-247 package dimensions match your thermal management design requirements. Ensure the component meets the required voltage and current ratings for your specific circuit topology before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage blocking capability combined with low conduction losses. The MDmesh K5 technology offers improved performance over standard MOSFETs. Consider the thermal resistance of the TO-247 package for heat dissipation planning in your application.
Single FETs, MOSFETs Part Context
This part belongs to STMicroelectronics' MDmesh K5 family of high-voltage N-channel power MOSFETs. The series is engineered to deliver enhanced performance through reduced on-resistance and gate charge. These devices are intended for use in applications where power density and efficiency are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same MDmesh K5 family or other high-voltage TO-247 packages. Verify that any substitute maintains the 900 V rating and comparable on-resistance values to ensure circuit compatibility.
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