SUD23N06-31-GE3

$1.04

Description：MOSFET N-CH 60V 21.4A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ccd0087347c2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUD23N06-31-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 21.4A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD23N06-31-GE3

Description：MOSFET N-CH 60V 21.4A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5.7W (Ta), 31.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD23N06-31-GE3

SUD23N06-31-GE3

Single FETs, MOSFETs Overview

The SUD23N06-31-GE3 is a Vishay Siliconix N-channel TrenchFET power MOSFET housed in a TO-252 (DPAK) package. It features a 60 V drain-source voltage rating and a continuous drain current of 9.1 A at 25 °C ambient temperature, increasing to 21.4 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.031 Ω at VGS = 10 V and 15 A. Total gate charge is typically 11 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology for optimized performance
Includes 100% Rg and UIS testing for reliability
Constructed with lead-free and halogen-free materials

Single FETs, MOSFETs Applications

DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official Vishay documentation before procurement. Confirm that the component meets specific RoHS and REACH compliance requirements for your region. Ensure thermal management aligns with the specified junction-to-case and junction-to-ambient thermal resistance ratings during operation.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching applications requiring high efficiency. Consider the thermal derating curves when designing for higher ambient temperatures. Verify that the gate drive voltage supports the specified RDS(on) thresholds for optimal conduction losses.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SUD series of N-channel MOSFETs. It is designed for surface-mount applications where compact footprints are required. The TO-252 package provides a balance between current handling capability and board space efficiency.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative Vishay models with similar voltage and current ratings. Ensure pinout compatibility and thermal characteristics match the existing design constraints.