SUD23N06-31L-T4BE3

$1.02

Description：MOSFET N-CH 60V 9.1A/21.4A DPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1fb2900c87f1 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SUD23N06-31L-T4BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 9.1A/21.4A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD23N06-31L-T4BE3

Description：MOSFET N-CH 60V 9.1A/21.4A DPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.1A (Ta), 21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5.7W (Ta), 31.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD23N06-31L-T4BE3

SUD23N06-31L-T4BE3

Single FETs, MOSFETs Overview

The SUD23N06-31L-T4BE3 is a Vishay Siliconix N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a continuous drain current of 9.1 A at an ambient temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.031 Ω at VGS = 10 V and 0.045 Ω at VGS = 4.5 V. Total gate charge is typically 11 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-252 (DPAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Features a lead-free and halogen-free construction compliant with IEC 61249-2-21
Includes 100% Rg and UIS testing for reliability assurance

Single FETs, MOSFETs Applications

DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T4BE3' against official manufacturer documentation, as standard listings often reference 'GE3'. Confirm RoHS compliance status directly with the supplier. Ensure the component matches the TO-252 package outline and verify that the intended application does not exceed the absolute maximum ratings defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching applications requiring high efficiency. The low on-resistance supports effective thermal management in compact designs. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction. Consider the thermal resistance characteristics when designing the PCB copper area for adequate heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the SUD23N06-31 series from Vishay Siliconix. It is designed as a general-purpose N-channel MOSFET for power switching. The product line emphasizes robustness through comprehensive testing protocols. The TO-252 package facilitates automated surface-mount assembly processes.