SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
SUM25P10-138-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 16.7A TO263. Review the specifications below when checking this part for your BOM.
The SUM25P10-138-E3 is a Vishay Siliconix P-Channel MOSFET utilizing TrenchFET technology, housed in a TO-263 (D2PAK) package. It features a drain-source voltage of -100 V and a continuous drain current of -16.7 A at 25 °C case temperature. The on-state resistance is specified as 0.138 Ω at VGS = -10 V and 0.141 Ω at VGS = -7.5 V. Total gate charge is typically 24 nC at VGS = -6 V. The device supports an operating junction temperature range from -55 °C to +175 °C.
Verify the specific ordering suffix '-E3' confirms lead-free compliance when sourcing components. Confirm that the physical package matches the TO-263 (D2PAK) footprint requirements for your PCB layout. Ensure the supplier provides documentation verifying RoHS and material categorization compliance standards.
Select this component for applications requiring a -100 V rating with moderate current handling up to -16.7 A. Consider the thermal resistance characteristics and the necessity of connecting the drain tab to the heatsink for optimal power dissipation. Evaluate the gate drive voltage levels against the specified RDS(on) thresholds for efficiency optimization.
This part belongs to the SUM series of Vishay Siliconix power MOSFETs. It represents a P-Channel variant designed for general-purpose switching applications. The device integrates advanced silicon die technologies within a surface-mount package suitable for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided datasheet or source materials. Verify pinout compatibility and electrical specifications before considering any alternative devices from different manufacturers.
Yes, the datasheet specifies that the device undergoes 100% testing for single-pulse avalanche energy (EAS).
The maximum operating junction temperature is +175 °C.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.