SUM90142E-GE3

$3.07

Description：MOSFET N-CH 200V 90A TO263
Series：ThunderFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a25b87477c54 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SUM90142E-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 90A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUM90142E-GE3

Description：MOSFET N-CH 200V 90A TO263
Series：ThunderFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3120 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SUM90142E-GE3

SUM90142E-GE3

Single FETs, MOSFETs Overview

The SUM90142E-GE3 is a Vishay Siliconix N-channel power MOSFET utilizing ThunderFET technology, housed in a TO-263 package. It supports a drain-source voltage of 200 V and a continuous drain current of 90 A at 25 °C case temperature. The device features a maximum on-state resistance of 0.0150 Ω at VGS = 10 V and 0.0165 Ω at VGS = 7.5 V. Typical gate charge is 58 nC, with a maximum junction temperature rating of 175 °C.

Single FETs, MOSFETs Feature Summary

ThunderFET power MOSFET architecture
Maximum 175 °C junction temperature capability
100% Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

Uninterruptible power supplies
AC/DC switch-mode power supplies
Synchronous rectification
DC/DC converters
Motor drive switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free and halogen-free compliance status. Confirm that the TO-263 package dimensions align with your PCB footprint requirements. Ensure thermal management design accommodates the specified junction-to-case thermal resistance ratings under expected operating loads.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche energy handling and low conduction losses. Evaluate the gate charge specifications against driver capabilities to optimize switching performance. Consider the 175 °C junction temperature limit when designing thermal dissipation strategies for high-current scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the SUM series of Vishay Siliconix N-channel MOSFETs. It utilizes ThunderFET technology to achieve low on-resistance and high current handling within the TO-263 surface-mount package. The product line is designed for demanding power conversion environments.