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The SVC203C-TB-E is a silicon variable capacitance diode designed for Very High Frequency (VHF) band applications. It features a common cathode configuration with two internal elements housed in a surface-mount R-PDSO-G3 package. The device has a maximum repetitive peak reverse voltage of 16 V and a nominal diode capacitance of 62.39 pF. Key electrical characteristics include a minimum diode capacitance ratio of 4.6, a diode capacitance tolerance of 5.75%, and a minimum quality factor of 60. The component operates within a temperature range up to 125 °C.
Verify the manufacturer designation carefully, as the 'SVC' prefix and specific parameters are historically associated with Sanyo Semiconductor. Confirm that the TB suffix corresponds to the specific tape-and-reel packaging format required for your production line. Ensure the component meets current RoHS compliance standards before integration into final assemblies.
Select this component when a dual-tuning element solution is required in a compact surface-mount footprint. The 16 V rating and 62.39 pF nominal capacitance suit standard VHF front-end designs. Verify that the 5.75% capacitance tolerance aligns with the circuit's sensitivity requirements and that the operating temperature range covers the intended environmental conditions.
This part belongs to the family of silicon varactor diodes utilized in radio frequency signal processing. The specific model integrates two varactors in a single package to simplify board space and reduce parasitic inductance compared to discrete solutions. It serves as a passive component for voltage-controlled reactance adjustment in analog RF systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual-element VHF varactors only if pin compatibility and electrical specifications such as breakdown voltage and capacitance range are strictly matched.