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The T16M35T800UD is a silicon bidirectional thyristor (Triac) manufactured by Diodes Incorporated. It features an 800V repetitive peak off-state voltage and a 16A RMS on-state current rating at +125°C. The device supports triggering in three quadrants with a maximum gate trigger current of 35mA. It operates within a junction temperature range of -40°C to +125°C and utilizes a TO-220AB package.
Verify the specific ordering suffix UD against official Diodes Incorporated documentation to confirm tube packing quantities and carrier specifications. Ensure that procurement channels are authorized to maintain product integrity and warranty coverage. Cross-reference datasheet revision DS45512 Rev. 3-2 for accurate electrical parameters before finalizing orders.
Select this component when an 800V blocking voltage and 16A continuous current capacity are required for AC switching applications. The three-quadrant triggering capability allows flexibility in gate drive circuitry. Verify thermal management requirements based on the specified thermal resistance values and ambient operating conditions.
This Triac belongs to the T16MxxT800UD series, which shares identical mechanical and electrical ratings but differs in gate sensitivity. The T16M35T800UD variant specifies a higher maximum gate trigger current compared to the T16M10T800UD, accommodating different driver capabilities while maintaining the same power handling characteristics.
The T16M10T800UD is a direct functional substitute within the same series, differing primarily in gate trigger current specifications. Verify compatibility with existing gate drive circuits when substituting between these variants.